| PART |
Description |
Maker |
| AT61162E05 AT61162E-PM40M-E AT61162E-PM40MMN |
Rad Hard 2-Mbit x 8 SRAM Cube
|
ATMEL Corporation
|
| HCC40107BDG HCC4017BDG HCC4017BDT HCC4027BDG HCC40 |
Rad-hard dual 2-input NAND buffer/driver
Rad-hard decade counter/divider
Rad-hard dual J-K master-slave Flip-Flop
Rad-hard triple 3-input NAND gate
Rad-hard 4-bit magnitude comparator
Rad-hard triple 3-input AND gate
Rad-hard hex buffer 3-state non-inverter
Rad-hard hex schmitt trigger
Rad-hard hex inverting buffer/converter
Rad-hard hex inverter
|
ST Microelectronics
|
| AT68166F |
Rad Hard 16 MegaBit 3.3V SRAM Multi-Chip Module
|
ATMEL Corporation
|
| AT60142FT-DS17ESCC AT60142FT-DC17M-E AT60142FT-DS1 |
Rad Hard 512K x 8 5V Tolerant Very Low Power CMOS SRAM
|
ATMEL Corporation
|
| UPD42S16100LLA-A80 UPD42S16100LG3-A80-7JD UPD42S17 |
18-Mbit (512K x 36/1M x 18) Pipelined SRAM
18-Mbit DDR-II SIO SRAM 2-Word Burst Architecture
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM
9-Mbit (256K x 32) Pipelined DCD Sync SRAM
9-Mbit (256K x 36/512K x 18) Pipelined DCD Sync SRAM
18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM
x1 Fast Page Mode DRAM x1快速页面模式的DRAM
|
TOKO, Inc.
EPCOS AG
|
| CD4023BMS CD4012BMS CD4011BMS FN3079 CD4023B CD401 |
From old datasheet system
CMOS NAND Gates
NAND, 3-Input, Triple, Rad-Hard, CMOS, Logic
NAND, 2-Input, Quad, Rad-Hard, CMOS, Logic
NAND, 4-Input, Dual, Rad-Hard, CMOS, Logic
|
INTERSIL[Intersil Corporation]
|
| ISL70001ASEHVFE ISL70001ASEHF ISL70001ASEHVX ISL70 |
Rad Hard and SEE Hard 6A Synchronous Buck Regulator
|
Intersil Corporation
|
| 5962R9672201VCC 5962R9672201QXC 5962R9672302VCC 59 |
Line Receiver, Party, Triple, Rad-Hard
Line Receiver, Triple, Rad-Hard
Line Transmitter, Triple, Rad-Hard
Radiation Hardened Triple Line Transmitter
|
Intersil Corporation
|
| FSS430R4 FSS430D FSS430D1 FSS430D3 FSS430R FSS430R |
3A, 500V, 2.70 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs 3 A, 500 V, 2.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA
3A, 500V, 2.70 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs 3A00V.70欧姆，拉德硬，SEGR耐，N沟道功率MOSFET
3A/ 500V/ 2.70 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
http://
|
| PE9601EK 9601-00 9601-01 9601-11 PE9601 |
2200 MHz UltraCMOS Integer-N PLL for Rad Hard Applications
2200 MHz UltraCMOS?/a> Integer-N PLL for Rad Hard Applications
2200 MHz UltraCMOSInteger-N PLL for Rad Hard Applications
2200 MHz UltraCMOS⑩ Integer-N PLL for Rad Hard Applications
|
PEREGRINE[Peregrine Semiconductor Corp.]
|
| CY7C1316BV18 CY7C1318BV18 CY7C1916BV18 CY7C1320BV1 |
18-Mbit DDR-II SRAM 2-Word Burst Architecture(2字Burst结构,18-Mbit DDR-II SRAM) 18兆位的DDR - II SRAM字突发架构（2字突发结18 -兆位的DDR - II SRAM的）
18-Mbit DDR-II SRAM 2-Word Burst Architecture(2瀛?urst缁??,18-Mbit DDR-II SRAM)
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
